MAGNETIC-FIELD INCREASED LO-PHONON RAMAN-SCATTERING IN SELECTIVELY DOPED N-ALGAAS/INGAAS/GAAS QUANTUM-WELL

被引：1

作者：

BUTOV, LV ^{[1
]}

KULAKOVSKII, VD ^{[1
]}

SHEPEL, BN ^{[1
]}

ANDERSSON, TG ^{[1
]}

机构：

[1] CHALMERS UNIV TECHNOL,DEPT PHYS,S-41296 GOTHENBURG,SWEDEN

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1991年 / 10卷 / 03期

基金：

新加坡国家研究基金会;

关键词：

D O I：

10.1016/0749-6036(91)90322-I

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Raman scattering from a selectively doped n-AlxGa1-xAs/InyGa1-yAs/GaAs single quantum well (QW) has been studied in magnetic fields H<9T. The resonant Raman intensities are found to depend strongly on the magnetic field strength and direction for both electronic excitation and, especially, one-LO-phonon scattering. A mixing of the magnetic field-and QW-induced levels is supposed to be responsible for the change in Raman intensities for magnetic field parallel to the QW plane. © 1991.

引用

页码：265 / 267

页数：3

共 34 条

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