INTERMEDIATE TRANSFORMATION STRUCTURES IN SILICON-CARBIDE

被引:23
作者
JEPPS, NW
PAGE, TF
机构
来源
JOURNAL OF MICROSCOPY-OXFORD | 1980年 / 119卷 / MAY期
关键词
D O I
10.1111/j.1365-2818.1980.tb04088.x
中图分类号
TH742 [显微镜];
学科分类号
摘要
引用
收藏
页码:177 / 188
页数:12
相关论文
共 31 条
[1]  
Bollman W., 1970, CRYSTAL DEFECTS CRYS
[2]   CLASSIFICATION OF CRYSTALLINE INTERFACES BY MEANS OF O-LATTICE METHOD [J].
BOLLMANN, W .
JOURNAL OF MICROSCOPY-OXFORD, 1974, 102 (DEC) :233-239
[3]   PHASE TRANSFORMATIONS, HABIT CHANGES AND CRYSTAL GROWTH IN SIC [J].
BOOTSMA, GA ;
KNIPPENBERG, WF ;
VERSPUI, G .
JOURNAL OF CRYSTAL GROWTH, 1971, 8 (04) :341-+
[4]   MORPHOLOGY OF TRANSFORMATION INTERFACE IN REACTION-SINTERED SILICON-CARBIDE [J].
CLARKE, DR .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1977, 60 (11-1) :539-540
[5]  
CLARKE DR, 1976, 6TH P EUR C EL MICR, P564
[6]  
GAUTHIER JP, 1978, THESIS U C BERNARD L
[7]   BETA-]ALPHA-TRANSFORMATION IN POLYCRYSTALLINE SIC-I, MICROSTRUCTURAL ASPECTS [J].
HEUER, AH ;
FRYBURG, GA ;
OGBUJI, LU ;
MITCHELL, TE ;
SHINOZAKI, S .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1978, 61 (9-10) :406-412
[8]  
Inomata Y., 1969, YOGYO-KYOKAI-SHI, V77, P130
[9]  
Jagodzinski H., 1971, Kristallografiya, V16, P1235
[10]   ELECTRON-MICROSCOPY OF INTERFACES BETWEEN TRANSFORMING POLYTYPES IN SILICON-CARBIDE [J].
JEPPS, NW ;
PAGE, TF .
JOURNAL OF MICROSCOPY-OXFORD, 1979, 116 (MAY) :159-171