STUDY OF THE INTERFACE PROPERTIES OF CUINSE2 SINGLE-CRYSTAL HETEROJUNCTIONS AND SCHOTTKY BARRIERS

被引:7
作者
ABOUELFOTOUH, F
MATSON, RJ
BAKRY, AM
KAZMERSKI, LL
机构
[1] Solar Energy Research Institute, Golden, CO 80401
关键词
D O I
10.1016/0040-6090(90)90229-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
High resolution photoluminescence measurements performed at different excitation powers and different temperatures (7.8-90 K) are used to identify the origin and location of the various defect levels in single-crystal CuInSe2. Extrinsic radiative recombination surface states resulting from surface and heat treatments during the device fabrication steps have been determined. The correlation between the type and relative concentration of the intrinsic defect states dominating a particular surface of the material and the junction characteristic of the devices fabricated on that surface are noted.
引用
收藏
页码:769 / 776
页数:8
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