共 50 条
- [31] ELECTRICAL-CONDUCTIVITY OF HEAVILY DOPED P-TYPE DIAMOND SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (06): : 659 - 661
- [32] THERMOELECTRIC POWER OF HEAVILY DOPED P-TYPE GASB CRYSTALS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (11): : 1896 - &
- [33] RADIATIVE RECOMBINATION IN LIGHTLY AND HEAVILY DOPED P-TYPE GAAS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (08): : 1012 - +
- [34] CAPTURE OF CARRIERS IN Li-COMPENSATED p-TYPE GERMANIUM. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1976, 10 (06): : 673 - 675
- [35] HEATING OF CARRIERS IN P-TYPE GERMANIUM BY A WEAK ELECTRIC-FIELD SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (05): : 538 - 542
- [36] INVESTIGATION OF THE SATURATION OF THE DRIFT VELOCITY OF HOT CARRIERS IN P-TYPE GERMANIUM SOVIET PHYSICS-SOLID STATE, 1963, 5 (05): : 1074 - 1075
- [38] IMPURITY CONDUCTION IN TRANSMUTATION-DOPED P-TYPE GERMANIUM PHYSICAL REVIEW, 1960, 119 (04): : 1238 - 1245