INTRINSIC DENSITY OF CARRIERS IN HEAVILY DOPED P-TYPE GERMANIUM

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作者
BRYKSIN, VA
ZEMSKOV, VS
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1970年 / 4卷 / 04期
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O469 [凝聚态物理学];
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070205 ;
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页码:670 / &
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[1]  
Bryksin V. A., 1970, Fizika i Tekhnika Poluprovodnikov, V4, P791
[2]   EFFECT OF TEMPERATURE AND DOPING ON REFLECTIVITY OF GERMANIUM IN FUNDAMENTAL ABSORPTION REGION [J].
CARDONA, M ;
SOMMERS, HS .
PHYSICAL REVIEW, 1961, 122 (05) :1382-&
[3]  
Fistul' V.I., 1969, HEAVILY DOPED SEMICO, VVolume 1
[4]  
GOLIKOVA OA, 1964, SOV PHYS-SOL STATE, V5, P1393
[5]  
GOLIKOVA OA, 1963, FIZ TVERD TELA, V5, P1908
[6]   CONDUCTIVITY AND HALL EFFECT IN THE INTRINSIC RANGE OF GERMANIUM [J].
MORIN, FJ ;
MAITA, JP .
PHYSICAL REVIEW, 1954, 94 (06) :1525-1529
[7]  
Pauling L., 1960, NATURE CHEM BOND INT
[8]   LATTICE PARAMETERS, COEFFICIENTS OF THERMAL EXPANSION, AND ATOMIC WEIGHTS OF PUREST SILICON AND GERMANIUM [J].
STRAUMANIS, ME ;
AKA, EZ .
JOURNAL OF APPLIED PHYSICS, 1952, 23 (03) :330-334
[9]  
Zemskov V. S., 1969, Fizika i Tekhnika Poluprovodnikov, V3, P96
[10]  
ZEMSKOV VS, 1969, SOV PHYS SEMICOND+, V3, P72