ANALYSIS, DESIGN, AND FABRICATION OF GAALAS/GAAS DFB LASERS WITH MODULATED STRIPE WIDTH STRUCTURE FOR COMPLETE SINGLE LONGITUDINAL MODE OSCILLATION

被引：30

作者：

NAKANO, Y ^{[1
]}

TADA, K ^{[1
]}

机构：

[1] UNIV TOKYO,DEPT ELECTR ENGN,BUNKYO KU,TOKYO 113,JAPAN

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1988年 / 24卷 / 10期

关键词：

D O I：

10.1109/3.8537

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2017 / 2033

页数：17

共 41 条

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[6] ROOM-TEMPERATURE OPERATION OF LOW-THRESHOLD SEPARATE-CONFINEMENT HETEROSTRUCTURE INJECTION LASER WITH DISTRIBUTED FEEDBACK
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[8] LOW THRESHOLD CURRENT ALGAAS/GAAS RIB-WAVE-GUIDE SEPARATE-CONFINEMENT-HETEROSTRUCTURE DISTRIBUTED-FEEDBACK LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
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[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (06) : 839 - 842
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[10] 1.5-1.6-MU-M GALNASP/INP DYNAMIC-SINGLE-MODE (DSM) LASERS WITH DISTRIBUTED BRAGG REFLECTOR
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