CHARACTERIZATION OF BORON-NITRIDE FILMS PREPARED BY THE DUAL ION-BEAM DEPOSITION TECHNIQUE

被引：13
|
作者：
LIN, WL [1 ]
XIA, Z [1 ]
LIU, YL [1 ]
FEN, YC [1 ]
机构：
[1] SSTC ACAD SINICA,BEIJING 100080,PEOPLES R CHINA
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1990年 / 7卷 / 1-2期
关键词：
D O I：
10.1016/0921-5107(90)90014-3
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Boron nitride films have been synthesized using the dual ion beam deposition technique. A bombarding beam of 5-100 keV N2+ ions and a sputtering beam of 0.05-1.5 keV Ar+ ions were employed. The boron atoms sputtered from the boron target by the Ar+ ion beam were deposited onto the substrate of thermally oxidized silicon wafers which were bombarded by the N2+ ion beam simultaneously during deposition. Infrared (IR) absorption spectroscopy, X-ray photoelectron spectroscopy (XPS) and microhardness tests were used to study the properties of the resulting films. The IR spectra showed a clear and strong peak due to the cubic boron nitride phase together with two peaks of the hexagonal phase. The microhardness of the films is in excess of 4300 HV. © 1990.
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页码：107 / 110
页数：4
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