VALENCE BAND OFFSETS OF THE INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICE

This paper presents a theoretical study of the valence band offset of the InxGa1-xAs/GaAs strained-layer superlattices by the ab initio pseudopotential method on the basis of local density functional formalism (LDF). The strain of the superlattice is determined by the valence force field method (VFF), and the spin-orbit interaction is included a posteriori. In these superlattices, heavy holes and light holes are confined in the InxGa1-xAs and GaAs layers, respectively. Also studied is the conduction band offset ratio, which is almost indepdent of the In content x. © 1990 IOP Publishing Ltd.