VALENCE BAND OFFSETS OF THE INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICE

被引：8
作者：
SHIRAISHI, K
OHNO, T
机构：
[1] NTT Basic Research Laboratory, Musashino-shi, Tokyo
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 04期
关键词：
Ab initio pseudopotential; Band offset; Light hole; Lngaas/GaAs superlattice; Local density functional formalism; Valence force field method;
D O I：
10.1143/JJAP.29.L556
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
This paper presents a theoretical study of the valence band offset of the InxGa1-xAs/GaAs strained-layer superlattices by the ab initio pseudopotential method on the basis of local density functional formalism (LDF). The strain of the superlattice is determined by the valence force field method (VFF), and the spin-orbit interaction is included a posteriori. In these superlattices, heavy holes and light holes are confined in the InxGa1-xAs and GaAs layers, respectively. Also studied is the conduction band offset ratio, which is almost indepdent of the In content x. © 1990 IOP Publishing Ltd.
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页码：L556 / L558
页数：3
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