GROWTH OF SEMICONDUCTORS BY THE CLOSE-SPACED VAPOR TRANSPORT TECHNIQUE - A REVIEW

被引：32

作者：

PERRIER, G ^{[1
]}

PHILIPPE, R ^{[1
]}

DODELET, JP ^{[1
]}

机构：

[1] INST NATL RECH SCI ENERGIE, VARENNES J0L 2P0, QUEBEC, CANADA

来源：

JOURNAL OF MATERIALS RESEARCH | 1988年 / 3卷 / 05期

关键词：

We would like to thank Dr. G. Cohen-Solal for his help and his concern about this work. We thank M. C. Delisle for her participation. This collaboration between the Institut National de la Recherche Scientifique and the Groupe de Recherche et d'Etudes Pluridisciplinaires was supported by the France-Quebec scientific program of exchange;

D O I：

10.1557/JMR.1988.1031

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1031 / 1042

页数：12