DEFECT STATES IN A-SI1-XGEX-H STUDIED BY ELECTRON-SPIN RESONANCE

被引：22

作者：

FINGER, F

FUHS, W

BECK, G

CARIUS, R

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1987年 / 97-8卷

关键词：

D O I：

10.1016/0022-3093(87)90244-4

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1015 / 1018

页数：4

共 9 条

[1] HYDROGEN EVOLUTION FROM A-SI-C-H AND A-SI-GE-H ALLOYS [J].

BEYER, W ;

WAGNER, H ;

FINGER, F .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 :857-860

[2] HYPERFINE STUDIES OF DANGLING BONDS IN AMORPHOUS-SILICON [J].

BIEGELSEN, DK ;

STUTZMANN, M .

PHYSICAL REVIEW B, 1986, 33 (05) :3006-3011

[3] THE ANNEALING BEHAVIOR OF THE G=2.0026 ELECTRON-SPIN-RESONANCE LINE IN A-SI-H [J].

CARLOS, WE .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1984, 66 (1-2) :157-161

[4] ELECTRON-SPIN-RESONANCE (ELECTRON-SPIN-RESONANCE AND LESR) STUDIES IN A-SI1-XGEX-H [J].

FINGER, F ;

CARIUS, R ;

FUHS, W ;

SCHRIMPF, A .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 :731-734

[5] A SIMPLE MOLECULAR-ORBITAL CALCULATION OF ELECTRON-SPIN-RESONANCE G-VALUES FOR AMORPHOUS SI1-XCX, SI1-XGEX AND GE1-XCX [J].

ISHII, N ;

KUMEDA, M ;

SHIMIZU, T .

SOLID STATE COMMUNICATIONS, 1982, 41 (02) :143-146

[6]

MOORE GE, 1949, NBS467 CIRC

[7] ELECTRON-SPIN-RESONANCE AND IR STUDIES ON A-SI1-XGEX-H PREPARED BY GLOW-DISCHARGE DECOMPOSITION [J].

MORIMOTO, A ;

MIURA, T ;

KUMEDA, M ;

SHIMIZU, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) :L833-L836

[8]

STUTZMANN M, 1982, THESIS MARBURG

[9] INFLUENCE OF SPIN DEFECTS ON RECOMBINATION AND ELECTRONIC TRANSPORT IN AMORPHOUS-SILICON [J].

VOGETGROTE, U ;

KUMMERLE, W ;

FISCHER, R ;

STUKE, J .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 41 (02) :127-140

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