THE EFFECT OF PARALLEL CONDUCTANCE IN A ALGAAS/GAAS HETEROJUNCTION

被引：0

作者：

SHI, CX ^{[1
]}

XIN, SH ^{[1
]}

WU, DF ^{[1
]}

机构：

[1] CHINESE ACAD SCI, SHANGHAI INST MET, SHANGHAI, PEOPLES R CHINA

来源：

CHINESE PHYSICS-ENGLISH TR | 1988年 / 8卷 / 01期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：42 / 46

页数：5

共 6 条

[1] SHORT CHANNEL GA0.47IN0.53AS/AL0.48IN0.52AS SELECTIVELY DOPED FIELD-EFFECT TRANSISTORS
CHEN, CY
CHO, AY
ALAVI, K
GARBINSKI, PA
[J]. ELECTRON DEVICE LETTERS, 1982, 3 (08): : 205 - 208
[2] DELEGEBEAUDEUF D, 1982, IEEE ELECTR DEVICE L, V29, P955
[3] HENDEL RH, 1984, IEEE ELECTR DEVICE L, V5, P406, DOI 10.1109/EDL.1984.25965
[4] CURRENT-VOLTAGE CHARACTERISTICS OF AN ALGAAS/GAAS HETEROSTRUCTURE FET FOR HIGH GATE VOLTAGES
HIRANO, M
TAKANASHI, Y
SUGETA, T
[J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (11) : 496 - 499
[5] A NEW ALGAAS/GAAS HETEROJUNCTION FET WITH INSULATED GATE STRUCTURE (MISSFET)
HOTTA, T
SAKAKI, H
OHNO, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (02): : L122 - L124
[6] SHI CX, 1984, J SEMICONDUCTORS, V5, P239