MOLECULAR-DYNAMICS SIMULATION OF THE DAMAGE FORMED IN SILICON AT ENERGIES NEAR THRESHOLD

被引：5
作者：
MAZZONE, AM
机构：
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1988年 / 33卷 / 1-4期
关键词：
D O I：
10.1016/0168-583X(88)90680-5
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
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页码：776 / 779
页数：4
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