ELECTROCHEMICAL SURFACE CONDITIONING OF N-SI(111)

被引：15

作者：

RAPPICH, J ^{[1
]}

AGGOUR, M ^{[1
]}

RAUSCHER, S ^{[1
]}

LEWERENZ, HJ ^{[1
]}

JUNGBLUT, H ^{[1
]}

机构：

[1] HAHN MEITNER INST BERLIN GMBH,BEREICH PHYS CHEM,GRENZFLACHEN ABT,D-14109 BERLIN,GERMANY

来源：

SURFACE SCIENCE | 1995年 / 335卷 / 1-3期

关键词：

SEMICONDUCTOR-ELECTROLYTE INTERFACES; SILICON; SINGLE CRYSTAL SURFACES; SURFACE STRUCTURE;

D O I：

10.1016/0039-6028(95)00416-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The surface condition of n-Si(111) exposed to an acidic fluoride solution under white light illumination is strongly influenced by the applied electrode potential. The microtopography of the surface is changed from rough and porous to oxidized or oxidized and porous, respectively, if oscillations occur. These surfaces were investigated by in situ Fourier-transform infrared spectroscopy (FTIR) using internal reflection techniques, ex situ scanning tunneling, scanning and transmission electron microscopy (STM, SEM and TEM) and X-ray photoelectron spectroscopy (XPS). The photocurrent oscillations followed by the dark current transient in the same solution lead to the best chemical and electronic hydrogen-passivated surfaces.

引用

页码：160 / 165

页数：6

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