THE EX DEFECT CENTER IN POROUS SILICON

被引：33

作者：

CARLOS, WE

PROKES, SM

机构：

[1] Naval Research Laboratory, Washington

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 78卷 / 03期

关键词：

D O I：

10.1063/1.360761

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the observation of the EX center in porous silicon by electron spin resonance (ESR). This center has been previously observed in low temperature thin oxides on crystalline Si and is believed to comprise a delocalized hole on three or four oxygen dangling bonds at a Si vacancy. In porous Si the defect is seen only in samples which have been oxidized for a very short period of time (similar to 1 min). The ESR intensity of the EX center correlates with the red room-temperature photoluminescence.

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页码：2129 / 2131

页数：3

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