RANDOM-FIELD EFFECTS IN TWO-DIMENSIONAL, AND 3-DIMENSIONAL ISING ANTIFERROMAGNETS

被引：168

作者：

YOSHIZAWA, H

COWLEY, RA

SHIRANE, G

BIRGENEAU, RJ

GUGGENHEIM, HJ

IKEDA, H

机构：

[1] MIT,DEPT PHYS,CAMBRIDGE,MA 02139

[2] BELL TEL LABS INC,MURRAY HILL,NJ 07974

[3] OCHANOMIZU UNIV,DEPT PHYS,BUNKYO KU,TOKYO 112,JAPAN

来源：

PHYSICAL REVIEW LETTERS | 1982年 / 48卷 / 06期

关键词：

D O I：

10.1103/PhysRevLett.48.438

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：438 / 441

页数：4

共 22 条

[1]

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[6]

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[9] EFFECT OF RANDOM DEFECTS ON CRITICAL BEHAVIOR OF ISING MODELS [J].

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[10] SHARP PHASE-TRANSITION IN TWO-DIMENSIONAL DILUTE ANTIFERROMAGNETS RB2COCMG1-CF4 [J].

IKEDA, H .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1981, 50 (10) :3215-3221

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