Numerical Modeling of GaAs Field-Effect Transistor Characteristics as Functions of Channel Doping Profile Parameters

被引：0
|
作者：
Shestakov, A. K. [1 ]
Zhuravlev, K. S. [1 ]
机构：
[1] Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Pr Akad Lavrenteva 13, Novosibirsk 630090, Russia
来源：
OPTOELECTRONICS INSTRUMENTATION AND DATA PROCESSING | 2012年 / 48卷 / 01期
关键词：
FET; modeling; ion implantation;
D O I：
10.3103/S8756699012010177
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Gallium arsenide ion-doped field-effect transistors with a Schottky barrier and various doping profiles are modeled. Dependences of static transistor characteristics on doping profile parameters are calculated and analyzed. The physical processes that determine
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收藏
页码：105 / 109
页数：5
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