ELECTROLUMINESCENCE IN LIQUID-PHASE EPITAXIAL GASB DIODES

被引：11

|

作者：

BLOM, GM

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1971年 / 42卷 / 03期

关键词：

D O I：

10.1063/1.1660142

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1057 / &

相关论文

共 50 条

[1] Liquid-phase epitaxial growth of GaInAsSb with application to GaInAsSb/GaSb heterostructure diodes
Wu, Meng-Chyi
Chen, Chi-Ching
1600, (71):
[2] LIQUID-PHASE EPITAXIAL-GROWTH OF GAINASSB WITH APPLICATION TO GAINASSB/GASB HETEROSTRUCTURE DIODES
WU, MC
CHEN, CC
JOURNAL OF APPLIED PHYSICS, 1992, 71 (12) : 6116 - 6120
[3] LIQUID-PHASE EPITAXIAL-GROWTH OF ALGAASSB ON GASB
LAZZARI, JL
LECLERCQ, JL
GRUNBERG, P
JOULLIE, A
LAMBERT, B
BARBUSSE, D
FOURCADE, R
JOURNAL OF CRYSTAL GROWTH, 1992, 123 (3-4) : 465 - 478
[4] PHOTOLUMINESCENCE OF LIQUID-PHASE EPITAXIAL TE-DOPED GASB
WU, MC
CHEN, CC
JOURNAL OF APPLIED PHYSICS, 1993, 73 (12) : 8495 - 8501
[5] ELECTROLUMINESCENCE OF ZNSE-ZNTE DIODES OBTAINED BY LIQUID-PHASE EPITAXY
LOZYKOWSKI, HJ
OCZKOWSKI, HL
FIRSZT, F
JOURNAL OF LUMINESCENCE, 1975, 11 (1-2) : 75 - 81
[6] EFFICIENT ELECTROLUMINESCENCE FROM INP DIODES GROWN BY LIQUID-PHASE EPITAXY
BLOM, GM
WOODALL, JM
APPLIED PHYSICS LETTERS, 1970, 17 (09) : 373 - &
[7] LIQUID-PHASE EPITAXIAL-GROWTH OF INAS1-XSBX ON GASB
GERTNER, ER
ANDREWS, AM
BUBULAC, LO
CHEUNG, DT
LUDOWISE, MJ
RIEDEL, RA
JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (04) : 545 - 554
[8] Liquid-phase epitaxial growth of GaSb-related compounds on sulphide treated (100) GaSb substrates
L'vova, TV
Andreev, IA
Kunitsyna, EV
Mikhailova, MP
Ulin, VP
Yakovlev, YP
IEE PROCEEDINGS-OPTOELECTRONICS, 1998, 145 (05): : 303 - 306
[9] ELECTROLUMINESCENCE IN ALXGA1-XP DIODES PREPARED BY LIQUID-PHASE EPITAXY
KRESSEL, H
LADANY, I
JOURNAL OF APPLIED PHYSICS, 1968, 39 (11) : 5339 - &
[10] GREEN ELECTROLUMINESCENCE IN ZNSE-ZNTE HETEROJUNCTIONS BY LIQUID-PHASE EPITAXIAL-GROWTH
FUJITA, S
SAKAGUCHI, T
ARAI, S
MORIAI, F
ITOH, K
APPLIED PHYSICS LETTERS, 1972, 20 (08) : 317 - +

← 1 2 3 4 5 →