OXYGEN ON CLEAVED SILICON (111) - EFFECTS OF ATOMIC STEPS AND RESIDUAL GASES

被引：45
作者：
KASUPKE, N
HENZLER, M
机构：
来源：
SURFACE SCIENCE | 1980年 / 92卷 / 2-3期
关键词：
D O I：
10.1016/0039-6028(80)90213-7
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：407 / 416
页数：10
相关论文
共 10 条
[1]   ADSORPTION OF OXYGEN ON SILICON (111) SURFACES .2. [J].
DORN, R ;
LUTH, H ;
IBACH, H .
SURFACE SCIENCE, 1974, 42 (02) :583-594
[2]   STRUCTURE DEPENDENT OXIDATION OF CLEAN SI(111) SURFACES [J].
GUICHAR, GM ;
SEBENNE, CA ;
GARRY, GA ;
BALKANSKI, M .
SURFACE SCIENCE, 1976, 58 (02) :374-378
[3]   LEITFAHIGKEIT UND FELDEFFEKT REINER SILIZIUMSPALTFLACHEN [J].
HENZLER, M .
PHYSICA STATUS SOLIDI, 1967, 19 (02) :833-&
[4]   ROUGHNESS OF CLEAVED SEMICONDUCTOR SURFACES [J].
HENZLER, M .
SURFACE SCIENCE, 1973, 36 (01) :109-122
[5]   ADSORPTION OF WATER-VAPOR ON CLEAN CLEAVED GERMANIUM .1. STRUCTURAL AND KINETIC-PROPERTIES [J].
HENZLER, M ;
TOPLER, J .
SURFACE SCIENCE, 1973, 40 (02) :388-396
[6]   RELATIONS BETWEEN ELECTRONIC PROPERTIES OF CLEAN SURFACES AND ACTIVATED ADSORPTION [J].
IBACH, H .
SURFACE SCIENCE, 1975, 53 (DEC) :444-460
[7]   ADSORPTION OF OXYGEN ON SILICON (111) SURFACES .1. [J].
IBACH, H ;
HORN, K ;
DORN, R ;
LUTH, H .
SURFACE SCIENCE, 1973, 38 (02) :433-454
[8]  
KASUPKE N, UNPUBLISHED
[9]   ADSORPTION OF OXYGEN ON W(100) - ADSORPTION KINETICS AND ELECTRON STIMULATED DESORPTION [J].
MADEY, TE .
SURFACE SCIENCE, 1972, 33 (02) :355-+
[10]   BINDING STATES OF WATER-VAPOR ON CLEAVED GERMANIUM [J].
SINHAROY, S ;
HENZLER, M .
SURFACE SCIENCE, 1975, 51 (01) :75-88
1