INVESTIGATION OF THE SILICON-NITRIDE ON HYDROGENATED AMORPHOUS-SILICON INTERFACE

被引：7

|

作者：

GELATOS, AV

KANICKI, J

机构：

来源：

AMORPHOUS SILICON TECHNOLOGY - 1989 | 1989年 / 149卷

关键词：

D O I：

10.1557/PROC-149-729

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

收藏

页码：729 / 734

页数：6

相关论文

共 50 条

[1] METASTABLE EFFECTS IN HYDROGENATED AMORPHOUS-SILICON SILICON-NITRIDE MULTILAYERS
SONG, YH
EUN, CC
LEE, C
JANG, J
PHYSICAL REVIEW B, 1990, 42 (18): : 11862 - 11868
[2] FAST AND SLOW STATES AT THE INTERFACE OF AMORPHOUS-SILICON AND SILICON-NITRIDE
STREET, RA
TSAI, CC
APPLIED PHYSICS LETTERS, 1986, 48 (24) : 1672 - 1674
[3] DIRECT OBSERVATION OF THE SILICON-NITRIDE ON AMORPHOUS-SILICON INTERFACE STATES
GELATOS, AV
KANICKI, J
APPLIED PHYSICS LETTERS, 1990, 56 (10) : 940 - 942
[4] INSITU INVESTIGATION OF THE AMORPHOUS-SILICON SILICON-NITRIDE INTERFACES BY SPECTROELLIPSOMETRY
STCHAKOVSKY, M
DREVILLON, B
CABARROCAS, PRI
JOURNAL OF APPLIED PHYSICS, 1991, 70 (04) : 2132 - 2135
[5] BAND OFFSETS FOR THE SILICON-NITRIDE AMORPHOUS-SILICON INTERFACE - IMPLICATIONS FOR CHARGE TRANSPORT AND TRAPPING IN SILICON-NITRIDE
JACKSON, WB
MOYER, MD
TSAI, CC
MARSHALL, J
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 : 891 - 894
[6] CREATION OF NEAR-INTERFACE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON SILICON-NITRIDE HETEROJUNCTIONS - THE ROLE OF HYDROGEN
JACKSON, WB
MOYER, MD
PHYSICAL REVIEW B, 1987, 36 (11): : 6217 - 6220
[7] ELECTRONIC STATES AT THE HYDROGENATED AMORPHOUS-SILICON SILICON- NITRIDE INTERFACE
STREET, RA
THOMPSON, MJ
APPLIED PHYSICS LETTERS, 1984, 45 (07) : 769 - 771
[8] INSITU INVESTIGATION OF AMORPHOUS-SILICON SILICON-NITRIDE INTERFACES BY INFRARED ELLIPSOMETRY
SHIRAI, H
DREVILLON, B
OSSIKOVSKI, R
APPLIED PHYSICS LETTERS, 1993, 62 (22) : 2833 - 2835
[9] HYDROGEN EFFUSION FROM HYDROGENATED AMORPHOUS-SILICON CAUSED BY THE DEPOSITION OF A SILICON-NITRIDE OVERLAYER
MATSUMOTO, T
WATANABE, J
TANAKA, T
MISHIMA, Y
APPLIED PHYSICS LETTERS, 1991, 58 (01) : 39 - 41
[10] LONGITUDINAL ELECTRON-TRANSPORT IN HYDROGENATED AMORPHOUS-SILICON SILICON-NITRIDE MULTILAYER STRUCTURES
HATTORI, R
SHIRAFUJI, J
APPLIED PHYSICS LETTERS, 1990, 56 (03) : 259 - 261

← 1 2 3 4 5 →