SIMPLE-MODEL FOR PREDICTING RADIATION EFFECTS IN MOS DEVICES

被引：60

|

作者：

FREEMAN, R

HOLMESSIEDLE, A

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1978年 / 25卷 / 06期

关键词：

D O I：

10.1109/TNS.1978.4329516

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1216 / 1225

页数：10

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