SIMPLE-MODEL FOR PREDICTING RADIATION EFFECTS IN MOS DEVICES

被引：62
作者：
FREEMAN, R
HOLMESSIEDLE, A
机构：
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1978年 / 25卷 / 06期
关键词：
D O I：
10.1109/TNS.1978.4329516
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1216 / 1225
页数：10
相关论文
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