THE EFFECT OF TRENCH-GATE OXIDE STRUCTURE ON EPROM DEVICE OPERATION

被引：2
作者：
CHU, SSD
STECKL, AJ
机构：
[1] RENSSELAER POLYTECH INST,DEPT ELECT COMP & SYST ENGN,TROY,NY 12180
[2] RENSSELAER POLYTECH INST,CTR INTEGRATED ELECTR,TROY,NY 12180
来源：
IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 06期
关键词：
D O I：
10.1109/55.718
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：284 / 286
页数：3
相关论文
共 6 条
[1]  
CHU SSD, IN PRESS THIN TRENCH
[2]   BAMBI - A DESIGN-MODEL FOR POWER MOSFETS [J].
FRANZ, AF ;
FRANZ, GA .
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1985, 4 (03) :177-189
[3]   ANALYSIS AND MODELING OF FLOATING-GATE EEPROM CELLS [J].
KOLODNY, A ;
NIEH, STK ;
EITAN, B ;
SHAPPIR, J .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (06) :835-844
[4]   EMISSION PROBABILITY OF HOT-ELECTRONS FROM SILICON INTO SILICON DIOXIDE [J].
NING, TH ;
OSBURN, CM ;
YU, HN .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (01) :286-293
[5]   A NOVEL FLOATING-GATE METHOD FOR MEASUREMENT OF ULTRA-LOW HOLE AND ELECTRON GATE CURRENTS IN MOS-TRANSISTORS [J].
NISSANCOHEN, Y .
IEEE ELECTRON DEVICE LETTERS, 1986, 7 (10) :561-563
[6]   A SOURCE-SIDE INJECTION ERASABLE PROGRAMMABLE READ-ONLY-MEMORY (SI-EPROM) DEVICE [J].
WU, AT ;
CHAN, TY ;
KO, PK ;
HU, CM .
IEEE ELECTRON DEVICE LETTERS, 1986, 7 (09) :540-542
1