SEMI-INSULATING CURRENT BLOCKING PROPERTY SIMULATIONS FOR BURIED HETEROSTRUCTURE LASER-DIODES

被引：1
作者：
ASADA, S
SUGOU, S
KASAHARA, K
KATO, Y
KUMASHIRO, S
机构：
[1] NEC CORP,FUNDAMENTAL RES LABS,KAWASAKI,KANAGAWA 213,JAPAN
[2] NEC CORP,DIV ENGN,CAD,VLSI,KAWASAKI 211,JAPAN
来源：
APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 09期
关键词：
D O I：
10.1063/1.99352
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：703 / 705
页数：3
相关论文
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