EFFECT OF AMBIENT TEMPERATURE AND COOLING RATE ON SURFACE CHARGE AT SILICON/SILICON DIOXIDE INTERFACE

被引：27
作者：
LAMB, DR
BADCOCK, FR
机构：
来源：
INTERNATIONAL JOURNAL OF ELECTRONICS | 1968年 / 24卷 / 01期
关键词：
D O I：
10.1080/00207216808937997
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：11 / &
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