FREE BORON MONOPHOSPHIDE WAFERS

被引：6
作者：
SUZUKI, A [1 ]
TAKIGAWA, M [1 ]
SHOHNO, K [1 ]
机构：
[1] SOFIA UNIV,FAC SCI & TECHNOL,SOFIA 26,BULGARIA
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1977年 / 16卷 / 06期
关键词：
D O I：
10.1143/JJAP.16.1053
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1053 / 1054
页数：2
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共 7 条
  • [1] CRYSTALS AND EPITAXIAL LAYERS OF BORON PHOSPHIDE
    CHU, TL
    JACKSON, JM
    HYSLOP, AE
    CHU, SC
    [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (01) : 420 - &
  • [2] THERMAL-EXPANSION COEFFICIENT OF BORON MONOPHOSPHIDE
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    NISHINAGA, T
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    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (07) : 1305 - 1308
  • [3] EPITAXIAL-GROWTH OF BP COMPOUNDS ON SI SUBSTRATES USING B2H6-PH3-H2 SYSTEM
    SHOHNO, K
    TAKIGAWA, M
    NAKADA, T
    [J]. JOURNAL OF CRYSTAL GROWTH, 1974, 24 (OCT) : 193 - 196
  • [4] HARDNESS OF BORON MONOPHOSPHIDE
    TAKENAKA, T
    TAKIGAWA, M
    SHOHNO, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (11) : 2235 - 2236
  • [5] BORON MONOPHOSPHIDE AND SOME OF ITS ELECTRICAL PROPERTIES
    TAKENAKA, T
    TAKIGAWA, M
    SHOHNO, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (04) : 579 - 580
  • [6] HETEROEPITAXIAL GROWTH OF BORON MONOPHOSPHIDE ON SILICON SUBSTRATE USING B2H6-PH3-H2 SYSTEM
    TAKIGAWA, M
    HIRAYAMA, M
    SHOHNO, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (03) : 411 - 416
  • [7] [No title captured]
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