EXTRINSIC PHOTOCONDUCTIVE CHARACTERISTICS OF SEMIINSULATING GAAS CRYSTALS

被引：18
|
作者：
MITA, Y [1 ]
机构：
[1] NEC CORP,OPTOELECTR RES LABS,KAWASAKI,KANAGAWA 213,JAPAN
来源：
JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 12期
关键词：
D O I：
10.1063/1.338268
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：5325 / 5329
页数：5
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