ETCHING OF GALLIUM ARSENIDE WITH NITRIC ACID

被引:15
作者
KYSER, DF
MILLEA, MF
机构
关键词
D O I
10.1149/1.2426328
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:1102 / 1104
页数:3
相关论文
共 50 条
[41]   Gallium arsenide etching using ion beams from hydrogen/methane mixtures [J].
Villalvilla, JM ;
Santos, C ;
VallesAbarca, JA .
VACUUM, 1996, 47 (01) :39-44
[42]   Aztec pyramid Electrochemical etching of Te-doped gallium arsenide structures [J].
SpringThorpe, Tony ;
Caballero, Juan ;
Barrios, Pedro ;
Wasilewski, Zbigniew .
MATERIALS TODAY, 2016, 19 (05) :292-293
[43]   Plasma-Chemical and Reactive Ion Etching of Gallium Arsenide in Difluorodichloromethane with Helium [J].
Murin, D.B. ;
Chesnokov, I.A. ;
Gogulev, I.A. ;
Anokhin, A.L. ;
Moloskin, A.E. .
Russian Microelectronics, 2024, 53 (04) :349-354
[44]   CF4-AR REACTIVE ION ETCHING OF GALLIUM-ARSENIDE [J].
LUSSIER, P ;
BELANGER, M ;
MEUNIER, M ;
CURRIE, JF .
CANADIAN JOURNAL OF PHYSICS, 1989, 67 (04) :259-261
[45]   Numerical prediction of the etched profile in pyrolytic laser etching of silicon and gallium arsenide [J].
Wee, Teng-Soon ;
Lu, Yong-Feng ;
Chim, Wai-Kin .
1997, JJAP, Tokyo, Japan (36)
[46]   Etching of Gallium Arsenide in a Cl2 + H2 Plasma [J].
Efremov A.M. ;
Antonov A.V. .
Russian Microelectronics, 2001, 30 (1) :1-6
[47]   SURFACE RIPPLES IN LASER-PHOTOCHEMICAL WET ETCHING OF GALLIUM-ARSENIDE [J].
TSUKADA, N ;
SUGATA, S ;
SAITOH, H ;
MITA, Y .
APPLIED PHYSICS LETTERS, 1983, 43 (02) :189-191
[48]   LASER-INDUCED LOCAL ETCHING OF GALLIUM-ARSENIDE IN GAS ATMOSPHERE [J].
TAKAI, M ;
TOKUDA, J ;
NAKAI, H ;
GAMO, K ;
NAMBA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (12) :L757-L759
[49]   LASER-INDUCED THERMOCHEMICAL ETCHING OF GALLIUM-ARSENIDE AND SILICON DEPOSITION [J].
TOKUDA, J ;
TAKAI, M ;
GAMO, K ;
NAMBA, S .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) :C455-C455
[50]   LASER-ASSISTED ETCHING OF GALLIUM-ARSENIDE IN CHLORINE AT 308 NM [J].
BERMAN, MR .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1991, 53 (05) :442-448