ETCHING OF GALLIUM ARSENIDE WITH NITRIC ACID

被引:15
作者
KYSER, DF
MILLEA, MF
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D O I
10.1149/1.2426328
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:1102 / 1104
页数:3
相关论文
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[3]  
LINDBERG O, 1962, COMPOUND SEMICONDUCT, V1, pCH34
[4]   JUNCTION DELINEATION IN GALLIUM ARSENIDE [J].
YEH, TH ;
BLAKESLEE, AE .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (09) :1018-1019
[5]  
1948, HDB CHEM PHYSICS