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- [4] KINETICS OF ETCHING OF GALLIUM ARSENIDE BY HYDROGEN IODIDE RUSSIAN JOURNAL OF PHYSICAL CHEMISTRY,USSR, 1969, 43 (11): : 1677 - &
- [6] A STUDY OF GALLIUM-ARSENIDE AND ALUMINUM GALLIUM-ARSENIDE REACTIVE ION ETCHING PARAMETERS JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 1604 - 1605
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- [9] ELLIPSOMETRIC STUDY OF ETCHING OF GALLIUM-ARSENIDE SURFACE JOURNAL OF APPLIED CHEMISTRY OF THE USSR, 1984, 57 (09): : 1969 - 1971