ANISOTROPY OF MICROWAVE COMPLEX CONDUCTIVITY DUE TO HOT-ELECTRONS IN N-TYPE GERMANIUM

被引：0

作者：

KOBAYASHI, T ^{[1
]}

NISHIDA, Y ^{[1
]}

FUJISAWA, K ^{[1
]}

机构：

[1] OSAKA UNIV, FAC ENGN SCI, DEPT ELECT ENGN, TOYONAKA 560, OSAKA, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1974年 / 13卷 / 06期

关键词：

D O I：

10.1143/JJAP.13.1025

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1025 / 1026

页数：2

共 9 条

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[5] MICROWAVE CONDUCTIVITY OF N-TYPE GERMANIUM IN PRESENCE OF HIGH ELECTRIC FIELD [J].

KOBAYASHI, T ;

YOSHIDA, K ;

KOBAYASHI, H ;

FUJISAWA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (07) :846-+

[6] DETERMINATION OF ENERGY RELAXATION-TIME OF HOT CARRIERS IN N-TYPE GEMANIUM FROM MEASUREMENTS OF MILLIMETER-WAVE COMPLEX CONDUCTIVITY [J].

KOBAYASHI, T ;

NISHIDA, Y ;

FUJISAWA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (04) :645-650

[7]

KOBAYASHI T, 1971, T IECE JAPAN B, V54, P506

[8]

Marcuvitz N., 1986, WAVEGUIDE HDB

[9] ANISOTROPY OF SMALL-SIGNAL MICROWAVE CONDUCTIVITY DUE TO HOT ELECTRONS IN INSB [J].

RICHTER, K ;

BONEK, E .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (08) :4035-&

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