ELECTRICAL AND PHYSICOCHEMICAL CHARACTERIZATIONS OF THE SIO2/SIC INTERFACE

被引：17
作者：
BILLON, T
BANO, E
DICIOCCIO, L
OUISSE, T
LASSAGNE, P
JAUSSAUD, C
机构：
[1] LETI (CEA - Technologies Avancées) DMITEC - CEN/G, F 38054 Grenoble Cedex 9, 17, rue des Martyrs
[2] Laboratoire de Physique des Composants à Semiconducteurs (URA CNRS 840), ENSERG -, F 38016 Grenoble Cedex, 23, rue des Martyrs
来源：
MICROELECTRONIC ENGINEERING | 1995年 / 28卷 / 1-4期
关键词：
D O I：
10.1016/0167-9317(95)00041-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
(6H) SiC MOS structures have been investigated by means of electrical and physicochemical characterizations. Al-doped p-type MOS capacitors still suffer from a large oxide charge. Although slightly better than thermal oxides, LPCVD oxides still exhibit similar properties, therefore indicating that the disorder is mainly interfacial. AFM studies do not show significant differences between n- and p-type layers. Characteristics of MOSFET's built on p-type epilayers are also presented.
引用
收藏
页码：193 / 196
页数：4
相关论文
共 50 条
  • [31] Structure and energetics of carbon defects in SiC (0001)/SiO2 systems at realistic temperatures: Defects in SiC, SiO2, and at their interface
    Kobayashi, Takuma
    Matsushita, Yu-ichiro
    JOURNAL OF APPLIED PHYSICS, 2019, 126 (14)
  • [32] A cause for SiC/SiO2 interface states:: The site selection of oxygen in SiC
    Deák, P
    Gali, A
    Hajnal, Z
    Frauenheim, T
    Son, NT
    Janzén, E
    Choyke, WJ
    Ordejón, P
    SILICON CARBIDE AND RELATED MATERIALS - 2002, 2002, 433-4 : 535 - 538
  • [33] Study on Interface Behavior of SiC/SiO2/Al and SiC/Ni/Al
    Xiaohong Wang
    Li Wang
    Xingyu Gao
    Qiao-gang Hu
    Mohd Talha
    Hao Liu
    Sensen Chai
    Transactions of the Indian Institute of Metals, 2019, 72 : 3171 - 3178
  • [34] ELECTRICAL CHARACTERIZATION OF THE PHOTODEPOSITED SIO2/SI INTERFACE
    SHARMA, U
    RCA REVIEW, 1986, 47 (04): : 551 - 577
  • [35] Study on Interface Behavior of SiC/SiO2/Al and SiC/Ni/Al
    Wang, Xiaohong
    Wang, Li
    Gao, Xingyu
    Hu, Qiao-gang
    Talha, Mohd
    Liu, Hao
    Chai, Sensen
    TRANSACTIONS OF THE INDIAN INSTITUTE OF METALS, 2019, 72 (12) : 3171 - 3178
  • [36] Interface features of SiO2/SiC heterostructures according to methods for producing the SiO2 thin films
    Bacherikov, Yu. Yu.
    Boltovets, N. S.
    Konakova, R. V.
    Kolyadina, E. Yu.
    Ledn'ova, T. M.
    Okhrimenko, O. B.
    SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS, 2012, 15 (01) : 13 - 16
  • [37] Positron annihilation studies of defects at the SiO2/SiC interface
    Dekker, J
    Saarinen, K
    Olafsson, HÖ
    Sveinbjörnsson, EÖ
    SILICON CARBIDE AND RELATED MATERIALS - 2002, 2002, 433-4 : 543 - 546
  • [38] SiO2/SiC interface properties on various surface orientations
    Yano, H
    Hirao, T
    Kimoto, T
    Matsunami, H
    SILICON CARBIDE 2002-MATERIALS, PROCESSING AND DEVICES, 2003, 742 : 219 - 226
  • [39] Visible and deep ultraviolet study of SiC/SiO2 interface
    Borowicz, Pawel
    Gutt, Tomasz
    Malachowski, Tomasz
    Latek, Mariusz
    HETEROSIC & WASMPE 2011, 2012, 711 : 118 - 123
  • [40] Atomic state and characterization of nitrogen at the SiC/SiO2 interface
    Xu, Y.
    Zhu, X.
    Lee, H. D.
    Xu, C.
    Shubeita, S. M.
    Ahyi, A. C.
    Sharma, Y.
    Williams, J. R.
    Lu, W.
    Ceesay, S.
    Tuttle, B. R.
    Wan, A.
    Pantelides, S. T.
    Gustafsson, T.
    Garfunkel, E. L.
    Feldman, L. C.
    JOURNAL OF APPLIED PHYSICS, 2014, 115 (03)
12345