ELECTRICAL AND PHYSICOCHEMICAL CHARACTERIZATIONS OF THE SIO2/SIC INTERFACE

被引：17

作者：

BILLON, T

BANO, E

DICIOCCIO, L

OUISSE, T

LASSAGNE, P

JAUSSAUD, C

机构：

[1] LETI (CEA - Technologies Avancées) DMITEC - CEN/G, F 38054 Grenoble Cedex 9, 17, rue des Martyrs

[2] Laboratoire de Physique des Composants à Semiconducteurs (URA CNRS 840), ENSERG -, F 38016 Grenoble Cedex, 23, rue des Martyrs

来源：

MICROELECTRONIC ENGINEERING | 1995年 / 28卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(95)00041-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

(6H) SiC MOS structures have been investigated by means of electrical and physicochemical characterizations. Al-doped p-type MOS capacitors still suffer from a large oxide charge. Although slightly better than thermal oxides, LPCVD oxides still exhibit similar properties, therefore indicating that the disorder is mainly interfacial. AFM studies do not show significant differences between n- and p-type layers. Characteristics of MOSFET's built on p-type epilayers are also presented.

引用

页码：193 / 196

页数：4