EPITAXY AND DOMAIN GROWTH OF PB ON NI(001)

被引:3
|
作者
TSE, T
STEPHENS, PW
ENG, PJ
机构
[1] Dept. of Phys., State Univ. of New York, Stony Brook, NY
关键词
D O I
10.1088/0953-8984/6/31/010
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We study the growth of the c(2 x 2) structure of Pb on Ni(001) with high-resolution x-ray diffraction. By monitoring the adsorbate-substrate and the adsorbate-adsorbate interference diffraction peaks, we are able to determine the registry and growth process of the first overlayer. Pb atoms change from hollow site to non-hollow site growth as coverage increases. Results at higher substrate temperatures indicate a different growth process at low coverage. We propose a model of adsorbate aggregation at sites in line with Ni atoms around pinning centres to account for the observed results.
引用
收藏
页码:6111 / 6123
页数:13
相关论文
共 50 条
  • [31] THE GROWTH OF GE ON A TE/SI(001) SURFACE - SURFACE CATALYTIC EPITAXY
    HIGUCHI, S
    NAKANISHI, Y
    SURFACE SCIENCE, 1991, 254 (1-3) : L465 - L468
  • [32] Growth of CoSi2 on Si(001) by reactive deposition epitaxy
    Lim, C.W.
    Shin, C.-S.
    Gall, D.
    Zuo, J.M.
    Petrov, I.
    Greene, J.E.
    1600, American Institute of Physics Inc. (97):
  • [33] Investigation on the InAsSbepilayers growth on GaAs(001) substrate by molecular beam epitaxy
    DBenyahia
    Kubiszyn
    KMichalczewski
    AKbowski
    PMartyniuk
    JPiotrowski
    ARogalski
    Journal of Semiconductors, 2018, (03) : 18 - 22
  • [34] Reactive deposition epitaxy growth of iron silicide nanoparticles on Si(001)
    Molnar, G.
    Dozsa, L.
    Vertesy, Z.
    Koos, A. A.
    Vouroutzis, N.
    Dimitriadis, C. A.
    Paraskevopoulos, K. M.
    EMRS-C: MATERIALS DEVICES AND ECONOMICS ISSUES FOR TOMORROW'S PHOTOVOLTAICS, 2011, 3
  • [35] Growth of GaSb layers on GaAs (001) substrate by molecular beam epitaxy
    Hao, Ruiting
    Xu, Yingqiang
    Zhou, Zhiqiang
    Ren, Zhengwei
    Ni, Haiqiao
    He, Zhenhong
    Niu, Zhichuan
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (04) : 1080 - 1084
  • [36] Single phase 3C-SiC(001)/Si(001) growth by surface controlled epitaxy
    Kitabatake, M
    SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 113 - 116
  • [37] Growth mechanism of beam-induced lateral epitaxy on (001)GaAs substrate in molecular beam epitaxy
    Naritsuka, S
    Suzuki, T
    Saitoh, K
    Maruyama, T
    Nishinaga, T
    JOURNAL OF CRYSTAL GROWTH, 2005, 276 (1-2) : 64 - 71
  • [38] GROWTH OF NI3GA2, NIGA AND NI2GA3 ON GAAS (001) AND (111) IN A MOLECULAR-BEAM EPITAXY SYSTEM
    GUIVARCH, A
    CAULET, J
    GUENAIS, B
    BALLINI, Y
    GUERIN, R
    POUDOULEC, A
    REGRENY, A
    JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) : 427 - 430
  • [39] EPITAXY ON SURFACES VICINAL TO SI(001) .2. GROWTH-PROPERTIES OF SI(001) STEPS
    ROLAND, C
    GILMER, GH
    PHYSICAL REVIEW B, 1992, 46 (20): : 13437 - 13451
  • [40] Domain epitaxy: A unified paradigm for thin film growth
    Narayan, J
    Larson, BC
    JOURNAL OF APPLIED PHYSICS, 2003, 93 (01) : 278 - 285