LAYER-BY-LAYER GROWTH OF BI2SR2CAN-1CUNOX FILMS WITH N-GREATER-THAN-OR-EQUAL-TO-3 BY MOLECULAR-BEAM EPITAXY

被引：8

作者：

BRAZDEIKIS, A

VAILIONIS, A

FLODSTROM, AS

机构：

[1] Department of Physics, Materials Physics, Royal Institute of Technology

来源：

PHYSICA C | 1994年 / 235卷

关键词：

D O I：

10.1016/0921-4534(94)91579-2

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin films of Bi2Sr2Can-1CunOx were grown using a layer-by-layer molecular beam epitaxy technique. The results demonstrate that nearly single-phase highly metastable films with n=4 to 11 can be synthesized both on SrTiO3 and MgO substrates and their physical properties studied. X-ray diffraction data of the films with n=8, 9, 10 and 11 are presented. The observed Laue oscillations indicate that the films exhibit high crystal quality and nearly perfect surfaces and interfaces. Resistivity measurements show semimetal-semiconductor transitions to occur at temperatures below 100 K, a result of insufficient doping by holes in the CuO2 planes as n increases.

引用

页码：711 / 712

页数：2