STRUCTURAL AND COMPOSITIONAL CHARACTERIZATION OF LASER-ABLATED CEO2 THIN-FILMS

被引：19
作者：
SANCHEZ, F
VARELA, M
FERRATER, C
GARCIACUENCA, MV
AGUIAR, R
MORENZA, JL
机构：
[1] Universitat de Barcelona, Department de Físita Aplicada i Electrònica, E-08028 Barcelona
来源：
APPLIED SURFACE SCIENCE | 1993年 / 70-1卷
关键词：
D O I：
10.1016/0169-4332(93)90405-Z
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
CeO2 thin films have been deposited on Si(100) substrates by laser ablation in ultrahigh vacuum. The structural and compositional properties of the films were studied by XRD, TEM, XPS and SIMS. All the films deposited in the temperature range 400-850-degrees-C have a preferential orientation (hhh). The deposition in an oxygen environment (10(-4) mbar) results in a great reduction of the film crystallinity. The existence of a 5 nm thick amorphous layer between the CeO2 film and the Si(100) substrate has been observed by TEM. XPS and SIMS results seem to indicate that this layer is a cerium silicide. SIMS profiles show that Ce diffuses toward the substrate, whereas 0 and Si do not diffuse.
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页码：94 / 98
页数：5
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