CRYOGENIC GROWTH OF AL NITRIDE ON GAAS(110) - X-RAY-PHOTOEMISSION SPECTROSCOPY AND INVERSE-PHOTOEMISSION SPECTROSCOPY

被引：12
作者：
PARK, KT
GAO, Y
机构：
[1] Department of Physics and Astronomy, University of Rochester, Rochester
来源：
PHYSICAL REVIEW B | 1993年 / 47卷 / 08期
关键词：
D O I：
10.1103/PhysRevB.47.4491
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report on our recent studies of Al nitride growth on GaAs(110) formed by depositing Al onto a condensed ammonia overlayer on GaAs(110) at T=90 K using x-ray-photoemission spectroscopy and inverse-photoemission spectroscopy. We have also investigated the temperature dependence of the interface thus formed. The results show some limited amount of Al nitride formed at T=90 K even though the reaction is slow, but the overlayer mostly remains metallic until the substrate is heated up. Much of the reaction of Al with ammonia occurs at about T=170 K, above which the overlayer becomes insulating. The combined information from occupied and unoccupied states reveals new features of the interface formation, and is consistent with our previous synchrotron photoemission studies of Al/NH3/GaAs(100).
引用
收藏
页码：4491 / 4497
页数：7
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