DEFECT PAIR CREATION THROUGH ULTRAVIOLET-RADIATION IN DENSE, AMORPHOUS SIO2

被引：49

作者：

DEVINE, RAB ^{[1
]}

ARNDT, J ^{[1
]}

机构：

[1] UNIV TUBINGEN,INST MINERAL PETROG,W-7400 TUBINGEN 1,GERMANY

来源：

PHYSICAL REVIEW B | 1990年 / 42卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.42.2617

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Defect creation in 24% densified, high-OH-concentration amorphous SiO2 has been studied using 248-nm excimer laser radiation. Combining laser and -ray radiation data, we find correlated growth of oxygen-vacancy and nonbridging oxygen-hole-center defects over a range of concentration from 5×1015 to 5×1017 cm-3. Oxygen-hole centers are created at least 100 times more efficiently in densified, high-OH-concentration SiO2 than in undensified, high-OH-concentration SiO2 for the same 248-nm-radiation dose. It is argued that strained bond cleavage is the dominant mechanism of defect creation by energetic photons in metastably densified oxides. The primary oxygen-vacancy-center creation mechanism by ultraviolet radiation in undensified, high-OH-concentration SiO2 appears to be network-atom-displacement related. © 1990 The American Physical Society.

引用

页码：2617 / 2620

页数：4

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