PLANAR HALL EFFECT IN HEAVY DOPED N-INSB AND ITS INFLUENCE ON MEASUREMENT OF MAGNETIC FIELD COMPONENTS WITH HALL GENERATORS AT 4.2 DEGREES K

被引：11
作者：
POLAK, M
HLASNIK, I
机构：
来源：
SOLID-STATE ELECTRONICS | 1970年 / 13卷 / 02期
关键词：
D O I：
10.1016/0038-1101(70)90054-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：219 / &
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