PHOTOINDUCED ABSORPTION OF GAP STATES IN IODINE-DOPED POLYACETYLENE

被引：0
作者：
EHRENFREUND, E
VARDENY, Z
BRAFMAN, O
WEAGLEY, R
EPSTEIN, AJ
机构：
[1] TECHNION ISRAEL INST TECHNOL,INST SOLID STATE,HAIFA,ISRAEL
[2] XEROX CORP,ROCHESTER,NY 14644
[3] OHIO STATE UNIV,DEPT PHYS,COLUMBUS,OH 43210
[4] OHIO STATE UNIV,DEPT CHEM,COLUMBUS,OH 43210
来源：
SYNTHETIC METALS | 1987年 / 21卷 / 01期
关键词：
D O I：
10.1016/0379-6779(87)90075-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have studied steady-state photoinduced absorption in trans-[CH(I3)y]x from 0.1 eV to 2.5 eV. In the lightly-doped semiconducting phase we have found evidence for interband gap increase with doping, in accordance with the soliton lattice model. The photogenerated charged defects in the heavily-doped metallic phase are characterized by two correlated absorption bands and infrared-active vibrations. © 1987.
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页码：123 / 128
页数：6
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