PHOTO-VOLTAIC EFFECT AND OPTICAL-ABSORPTION IN MOS2

被引：120
作者：
FORTIN, E
SEARS, WM
机构：
来源：
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1982年 / 43卷 / 09期
关键词：
D O I：
10.1016/0022-3697(82)90037-3
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
引用
收藏
页码：881 / 884
页数：4
相关论文
共 19 条
[1]  
Clemen C., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P1255
[2]   PHOTO-VOLTAIC PROPERTIES OF SOME SEMICONDUCTING LAYER STRUCTURES [J].
CLEMEN, C ;
SALDANA, XI ;
MUNZ, P ;
BUCHER, E .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 49 (02) :437-443
[3]   ELECTRONIC-STRUCTURE AND BAND THEORY OF TRANSITION-METAL DICHALCOGENIDES [J].
DORAN, NJ .
PHYSICA B & C, 1980, 99 (1-4) :227-237
[4]  
Evans B. L., 1968, British Journal of Applied Physics (Journal of Physics D), V1, P1619
[5]   EXCITONS IN MOLYBDENUM-DISULFIDE [J].
FORTIN, E ;
RAGA, F .
PHYSICAL REVIEW B, 1975, 11 (02) :905-912
[6]   LOW-ENERGY ABSORPTION-EDGE IN 2H-MOS2 AND 2H-MOSE2 [J].
GOLDBERG, AM ;
BEAL, AR ;
LEVY, FA ;
DAVIS, EA .
PHILOSOPHICAL MAGAZINE, 1975, 32 (02) :367-378
[7]  
GRANT AJ, 1975, J PHYS C SOLID STATE, V8, pL17, DOI 10.1088/0022-3719/8/1/004
[8]   THE ROLE OF CARRIER DIFFUSION AND INDIRECT OPTICAL-TRANSITIONS IN THE PHOTOELECTROCHEMICAL BEHAVIOR OF LAYER TYPE D-BAND SEMICONDUCTORS [J].
KAUTEK, W ;
GERISCHER, H ;
TRIBUTSCH, H .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (11) :2471-2478
[9]  
KAUTEK W, 1979, BER BUNSEN PHYS CHEM, V83, P1000, DOI 10.1002/bbpc.19790831010
[10]   PHOTO-VOLTAIC EFFECT AND SCHOTTKY BARRIERS IN THE AU-IN1-XGAXSB SYSTEM [J].
KEELER, WJ ;
ROTH, AP ;
FORTIN, E .
CANADIAN JOURNAL OF PHYSICS, 1980, 58 (01) :63-67
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