THEORY OF DISPERSIVE RELAXATION IN AMORPHOUS-SEMICONDUCTORS

被引：5
作者：
DHARIWAL, SR
DEORAJ, BM
机构：
[1] Department of Physics, University of Jodhpur, Jodhpur
来源：
SOLID STATE COMMUNICATIONS | 1991年 / 79卷 / 06期
关键词：
D O I：
10.1016/0038-1098(91)90043-U
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A theoretical derivation is given to the empirical formula delta-n(t) = delta-n(0)K(nu-c(t))-1 + alpha exp [-(t/tau-eff)alpha] for dispersive relaxation of photoconductivity and photoluminescence in amorphous semiconductors of which the power law t-1 + alpha also forms a limiting case. Limits of validity of the formula have been brought out and higher order correction terms have been obtained. At higher excitations or longer times saturation effect becomes important and a quasi-equilibrium between free and trapped charges can be assumed. This gives t-1/1 - alpha decay for the later part of the transient.
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页码：521 / 524
页数：4
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