HIGH-POWER OPERATION OF A TRANSVERSE-MODE STABILIZED ALGALNP VISIBLE-LIGHT (LAMBDA-L = 683NM) SEMICONDUCTOR-LASER

被引：32

作者：

FUJII, H

KOBAYASHI, K

KAWATA, S

GOMYO, A

HINO, I

HOTTA, H

SUZUKI, T

机构：

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 18期

关键词：

D O I：

10.1049/el:19870661

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：938 / 939

页数：2

共 6 条

[1] AGING CHARACTERISTICS OF ALGAINP/GAINP VISIBLE-LIGHT LASERS (LAMBDA-L = 678 NM) [J].

GOMYO, A ;

KOBAYASHI, K ;

KAWATA, S ;

HINO, I ;

SUZUKI, T .

ELECTRONICS LETTERS, 1987, 23 (02) :85-85

[2]

HINO I, 1985, I PHYS C SER, V79, P151

[3] ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF AN ALGAINP MESA STRIPE LASER [J].

IKEDA, M ;

NAKANO, K ;

MORI, Y ;

KANEKO, K ;

WATANABE, N .

APPLIED PHYSICS LETTERS, 1986, 48 (02) :89-91

[4] ROOM-TEMPERATURE CW OPERATION OF INGAP/INGAAIP VISIBLE-LIGHT LASER-DIODES ON GAAS SUBSTRATES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

ISHIKAWA, M ;

OHBA, Y ;

SUGAWARA, H ;

YAMAMOTO, M ;

NAKANISI, T .

APPLIED PHYSICS LETTERS, 1986, 48 (03) :207-208

[5] ROOM-TEMPERATURE CW OPERATION OF ALGALNP DOUBLE-HETEROSTRUCTURE VISIBLE LASERS [J].

KOBAYASHI, K ;

KAWATA, S ;

GOMYO, A ;

HINO, I ;

SUZUKI, T .

ELECTRONICS LETTERS, 1985, 21 (20) :931-932

[6]

SUZUKI T, 1986, 18TH INT C SOL STAT, P149

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