NOVEL TEST STRUCTURE FOR THE MEASUREMENT OF ELECTROSTATIC DISCHARGE PULSES

被引：2
作者：
LENDENMANN, H
SCHRIMPF, RD
BRIDGES, AD
机构：
[1] Integrated Systems Laboratory, Swiss Federal Institute of Technology, Zurich
[2] Department of Electrical and Computer Engineering, University of Arizona, Tucson, AZ
[3] AT&T Microelectronics, Allentown, PA
来源：
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING | 1991年 / 4卷 / 03期
关键词：
Electric Discharges;
D O I：
10.1109/66.85942
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A test chip to measure electrostatic discharge (ESD) events was designed and fabricated. The structure for the measurement of the pulses was based on a floating-gate field-effect transistor. Experiments showed that the shift of the device characteristics following an ESD event can be used to measure ESD pulse magnitudes down to approximately 60 V.
引用
收藏
页码：213 / 218
页数：6
相关论文
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[2]  
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