ELECTRONIC-STRUCTURE OF MOLECULAR-BEAM-EPITAXY GROWTH-INDUCED DEFECTS IN GAAS

被引：13
作者：
BEYE, AC
GIL, B
NEU, G
VERIE, C
机构：
来源：
PHYSICAL REVIEW B | 1988年 / 37卷 / 09期
关键词：
D O I：
10.1103/PhysRevB.37.4514
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：4514 / 4527
页数：14
相关论文
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