SI AND SIO2 ETCHING CHARACTERISTICS BY FLUOROCARBON ION-BEAM

被引：31

作者：

HORIIKE, Y

SHIBAGAKI, M

KADONO, K

机构：

[1] Toshiba Research and Development Center, Toshiba Corporation, Kawasaki

来源：

关键词：

D O I：

10.1143/JJAP.18.2309

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

[No abstract available]

引用

页码：2309 / 2310

页数：2

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[6] ROLE OF CHEMISORPTION IN PLASMA ETCHING [J].

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