INTERFACE CHARACTERIZATION OF SILICON EPITAXIAL LATERAL GROWTH OVER EXISTING SIO2 FOR 3-DIMENSIONAL CMOS STRUCTURES

被引：20

作者：

FRIEDRICH, JA

NEUDECK, GW

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 04期

关键词：

D O I：

10.1109/55.31698

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：144 / 146

页数：3

共 8 条

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[5] CHARACTERISTICS AND 3-DIMENSIONAL INTEGRATION OF MOSFETS IN SMALL-GRAIN LPCVD POLYCRYSTALLINE SILICON [J].

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SHICHIJO, H ;

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[6]

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[7] REDUCTION IN POLYSILICON OXIDE LEAKAGE CURRENT BY ANNEALING PRIOR TO OXIDATION [J].

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