PREPARATION AND PROPERTIES OF SILICA FILMS DEPOSITED FROM SILANE AND CARBON DIOXIDE

被引：15
作者：
SWANN, RCG
PYNE, AE
机构：
[1] ITT Semiconductors, West Palm Beach, Florida
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1969年 / 116卷 / 07期
关键词：
D O I：
10.1149/1.2412129
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Silicon dioxide has been deposited from a reaction involving silane and carbon dioxide. Hydrogen and argon were used as carrier gases. Growth rates were measured from 700° to 1100°C. The choice of carrier gas had a pronounced effect on the growth rate at low temperatures. Etch rates, di electric loss, and infrared spectra are reported. Interface charge properties are shown under certain conditions to be stable and hysteresis free with typical Nfb values of 1-3 x 1011 charge/cm2. © 1969, The Electrochemical Society, Inc. All rights reserved.
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页码：1014 / &
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