REVERSIBLE DIELECTRIC-BREAKDOWN OF THIN GATE OXIDES IN MOS DEVICES

被引:10
作者
SUNE, J
NAFRIA, M
AYMERICH, X
机构
[1] Departament de Física/Electrònica, Universitat Autònoma de Barcelona
来源
MICROELECTRONICS AND RELIABILITY | 1993年 / 33卷 / 07期
关键词
D O I
10.1016/0026-2714(93)90299-E
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
One of the most widely accepted features of the dielectric breakdown, its irreversibility, is discussed. Experimental results are presented which demonstrate that the observed irreversibility is only due to the thermal damage caused by the local increase of the current density. It is demonstrated that these thermal effects can be externally limited so as to produce reversible dielectric breakdown events. Both constant-voltage stresses and ramped measurements confirm the idea that the breakdown is intrinsically a reversible electronic phenomenon.
引用
收藏
页码:1031 / 1039
页数:9
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