STABLE ELECTRONIC-ENERGY LEVELS IN THE PRESENCE OF OFF-DIAGONAL DISORDER

被引：4
|
作者：
LASZLO, I [1 ]
机构：
[1] UPM,ESCUELA TECN SUPER INGN IND,DEPT APPL PHYS,E-28006 MADRID,SPAIN
来源：
INTERNATIONAL JOURNAL OF QUANTUM CHEMISTRY | 1993年 / 48卷 / 02期
关键词：
D O I：
10.1002/qua.560480206
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
It is demonstrated that the topological arrangement of atoms can guarantee the existence of stable electronic eigenvalues. These levels are stable in the presence of off-diagonal disorder. Graph theory is used to describe the topological structure of the Hamiltonian. The actual applications are presented in tight-binding approximation. It was found that graph theory can be used even if the atoms have more than one atomic orbital. Also, the localization properties of the topologically determined eigenvalues are studied. (C) 1993 John Wiley & Sons, Inc.
引用
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页码：135 / 146
页数：12
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