PROPERTIES OF INP FILMS GROWN BY ORGANOMETALLIC VPE METHOD

被引：29

作者：

FUKUI, T

HORIKOSHI, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷 / 07期

关键词：

D O I：

10.1143/JJAP.19.L395

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L395 / L397

页数：3

共 11 条

[1]

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[7] USE OF METAL-ORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .I. EPITAXIAL GALLIUM-V COMPOUNDS [J].

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[8]

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[9]

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[10] PROPERTIES OF EPITAXIAL GAAS LAYERS FROM A TRIETHYL GALLIUM AND ARSINE SYSTEM [J].

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